| PART |
Description |
Maker |
| 5962-9089903MTX 5962-9089903MUX 5962-9089903MXX 59 |
SOLID TANTALUM RoHS Compliant: Yes
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON 微电路，存储器，DIGITAA型，CMOS128K的8位闪存EEPROM存储器，单片
MICROCIRCUIT, MEMORY, DIGITAA, CMOS, 128K X 8 BIT FLASH EEPROM, MONOLITHIC SILICON 微电路，存储器，DIGITAA型，CMOS28K的8位闪存EEPROM存储器，单片
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| PS-AT65609EHW |
MICROCIRCUIT, DIGITAL, MEMORY, 8K x 8-Bit, 5V Very Low Power CMOS SRAM, MONOLITHIC SILICON
|
ATMEL Corporation
|
| CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory
90ns 2M-bit CMOS flash memory
70ns 2M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http://
CATALYST[Catalyst Semiconductor]
|
| INF8582E |
256 Х 8 BIT STATIC CMOS EEPROM WITH I2С-BUS. ( ANALOG - MICROCIRCUIT PCF8582Е, F.PHILIPS).
256 ? 8 BIT STATIC CMOS EEPROM WITH I2?-BUS. ( ANALOG - MICROCIRCUIT PCF8582?, F.PHILIPS).
|
Integral Corp.
|
| AS28F128J3MRG-15_ET AS28F128J3MRG-15_XT AS28F128J3 |
Plastic Encapsulated Microcircuit 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture
|
Austin Semiconductor
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| CDP1881C CDP1881CE CDP1882 CDP1882C CDP1882CE CDP1 |
CMOS 6-Bit Latch and Decoder Memory Interfaces(CMOS ６位锁存和解码存储器接口) 的CMOS 6位锁存器和解码器存储器接口的CMOS6位锁存和解码存储器接口）
CMOS 6-Bit Latch and Decoder Memory Interfaces HIGH LEVEL TRIGGERED D LATCH, TRUE OUTPUT, PDIP20
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
| AM75PDL193CHH70I AM75PDL191CHH70I AM75PDL191CHH040 |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Spansion, Inc.
|
| M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
